2sc4046 silicon npn epitaxial application high voltage amplifier outline 1. emitter
2. collector
3. base to-126 mod 1 2 3 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 120 v emitter to base voltage v ebo 5v collector current i c 0.2 a collector power dissipation p c * 1 8w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c
2sc4046 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 120 v i c = 10 a, i e = 0 collector to emitter breakdown voltage v (br)ceo 120 v i c = 1 ma, r be = _ emitter to base breakdown voltage v (br)ebo 5vi e = 10 a, i c = 0 collector cutoff current i cbo 10av cb = 80 v, i e = 0 dc current transfer ratio h fe * 1 250 800 v ce = 5 v, i c = 10 ma base to emitter voltage v be 1.0 v collector to emitter saturation voltage v ce(sat) 1.0 v i c = 200 ma, i b = 20 ma gain bandwidth product f t 350 mhz v ce = 10 v, i c = 50 ma collector output capacitance cob 3.5 pf v cb = 30 v, f = 1 mhz, i e = 0 note: 1. the 2sc4046 is grouped by h fe as follows. grade d e h fe 250 to 500 400 to 800
2sc4046 3 0 50 150 100 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 4 6 10 2 8 12 0.01 0.1 1.0 collector to emitter voltage v ce (v) collector current i c (a) 1 10 100 1,000 area of safe operation pw = 1 ms dc operation
t c = 25 c single pulse
ta = 25 c (25 v, 0.4 a) (80 v, 0.125 a) (120 v, 0.055 a) (120 v, 0.05 a) (80 v, 0.1 a) collector to emitter voltage v ce (v) collector current i c (ma) 0 typical output characteristics 4 8 12 18 40 60 80 100 120 20 20 40 60 80 100 i b = 0 20 m a 10 100 1,000 collector current i c (ma) dc current transfer ratio h fe 1 10 100 1,000 dc current transfer ratio vs. collector current ta = 75 c 25 ?5 v ce = 10 v pulse test
2sc4046 4 0.1 1.0 10 collector current i c (ma) base to emitter saturation voltage
v be (sat) (v) 1 10 100 1,000 base to emitter saturation voltage
vs. collector current ta = ?5 c 75 25 v ce = 10 v
pulse test 0.01 0.1 1.0 10 collector current i c (ma) collector to emitter saturation voltage
v ce (sat) (v) 1 10 100 1,000 collector to emitter saturation
voltage vs. collector current ?5 25 ta = 75 c i c /i b = 10
pulse test 1 10 100 1,000 collector current i c (ma) gain bandwidth product f t (mhz) 1 2 5 10 20 50 100 gain bandwidth product vs.
collector current v ce = 20 v
pulse test 10 5 1 2 5 10 20 50 100 collector to base voltage v cb (v) collector output capacitance c ob (pf) 1 2 5 10 20 50 100 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0
2sc4046 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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